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Friday 24 May 2013

Microwave tunnel diodes


Tunnel diodes can be used in microwave applications. Quantum tunneling theory is used to explain the tunneling phenomenon that take place in tunnel diodes.  Tunneling phenomenon is actually a majority carrier effect. Some of the advantages of tunnel diodes are low cost, less weight, high speed, low noise, high peak current to valley current ratio and low power operations. These parameters make tunnel diodes ideal candidate in applications like microwave amplification and microwave oscillation. The tunnel diode is a p-n junction semiconductor diode with negative resistance. Tunnel effect is responsible for this negative resistance. Heavy doping is employed during the construction of tunnel diodes. In tunnel diodes, Fermi level lie inside the valence band in p-region and inside the conduction band in n-region. While using for amplifier applications, tunnel diodes are connected either in parallel or in series with a resistive load. Another common practice is connecting tunnel diode to a microwave circulator.

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